A Patterning-Free Approach for Growth of Free-Standing Graphene Nanoribbons Using Step-Bunched Facets of Off-Oriented 4H-Sic(0 0 0 1) Epilayers
JOURNAL OF PHYSICS D-APPLIED PHYSICS（2020）
关键词
patterning-free,4H-SiC homoepilayer,step-bunched facets,sublimation epitaxy,free-standing graphene nanoribbons
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