The Role of Oxide Formation on Insulating Versus Metallic Substrates During Co and Ru Selective ALD
Applied Surface Science(2020)
摘要
•Novel, selective Ru ALD from HCOOH or TBA and RuDMBD(CO)3.•Hyper-selective Co ALD due to the formation of CoOx on insulator.•No etching of Cu substrates observed by using TBA as co-reactant.
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关键词
ALD,Cobalt,Ruthenium,Bottom-up fill,Organometallic,XPS
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