Bias-Dependent Contact Resistance Characterization of Carbon Nanotube FETs

An extraction method for a bias-dependent contact resistance is presented and applied to simulation and experimental data of single and multi-tube carbon nanotube field effect-transistors (CNTFETs) with different channel lengths and Schottky barrier heights. The method relies on the individual device characteristics, i.e., it can be applied to different CNTFET technologies. Furthermore, it does no...