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InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

N. A. Maleev,A. P. Vasil’ev,A. G. Kuzmenkov,M. A. Bobrov,M. M. Kulagina,S. I. Troshkov,S. N. Maleev,V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova,E. L. Fefelova,I. V. Makartsev,S. A. Blokhin, F. A. Ahmedov,A. V. Egorov,A. G. Fefelov,V. M. Ustinov

Technical Physics Letters（2019）

Cited 3|Views70
Key words
high-electron-mobility transistor,InP,breakdown voltage,millimeter wave amplifiers.
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