Multi-bias Small Signal Circuit Model for FinFET Transistors

In this paper, a multi-bias small signal circuit model for Fin Field-Effect transistor (FinFET) is proposed. Channel length modulation effect, non-quasi-static effect and the loss and coupling effects of the substrate are considered in this model. For verification, silicon Multi-Fin MOSFET was fabricated in 14 nm bulk FinFET technology. Based on the improved open/short deembedding method and the proposed model, the scattering parameters calculated by the model are compared with the measurement results. The magnitude root-mean-square-error (RMSE) of scattering parameter is less than 0.0082 for the proposed small signal circuit model. The comparison result indicates that the proposed model achieves high accuracy from 0.2 GHz to 50.2 GHz.