Progressive Breakdown on Bi-Layered Gate Oxide Stacks
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)（2019）
摘要
Using different proportions of A1
2
O
3
and HfO
2
dielectrics on a 10 nm thick gate insulator, this work studies the influence of each layer on the breakdown transients of metal-oxide-semiconductor (MOS) capacitors. The MOS structures are subjected to a constant voltage stress to determine the breakdown current and the degradation rate. Using an electromigration-based model to explain the current growth through the stack during progressive breakdown, a clear increase in the applied voltage that results in a certain degradation rate is observed as the A1
2
O
3
thickness is increased. This can be linked to a strong contribution of the higher thermal conductivity of A1
2
O
3
to the overall degradation dynamics of the stack. Results suggest that a small increase of the effective oxide thickness can be traded-off for longer lifetimes in future MOS stacks.
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关键词
degradation dynamics,effective oxide thickness,future MOS stacks,Bi-layered Gate Oxide Stacks,10 nm thick gate insulator,applied voltage,clear increase,progressive breakdown,current growth,electromigration-based model,degradation rate,breakdown current,constant voltage stress,MOS structures,metal-oxide-semiconductor capacitors,breakdown transients,size 10.0 nm,HfO2,Bi
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