Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

J. El Beyrouthy, A. Vauthelin,M. Seif, B. Sagnes, F. Pascal, A. Hoffman,M. Valenza,J. Boch, T. Maraine,S. Haendler,A. Gauthier,P. Chevalier,D. Gloria

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2019）

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摘要

This study presents an investigation of the dose response of Si/SiGe HBTs developed with the last generation of BiCMOS technologies. DC electrical characterization and low-frequency noise measurements are carried out to evaluate the post-radiation degradations.

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关键词

Degradation,Europe,Electric variables measurement,BiCMOS integrated circuits,Low-frequency noise,Heterojunction bipolar transistors,1/f noise

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