Mismatch of Ferroelectric Film on Negative Capacitance FETs Performance

IEEE Transactions on Electron Devices(2020)

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摘要
In this article, we analyze the impact of process variations of the ferroelectric film on the performance of the negative capacitance field-effect transistor (NCFET). Variations of the ferroelectric layer area (resulting from the variation of the transistor dimension sizes and the edge-effect), the ferroelectric layer thickness, the polarization, and the coercivity are taken into consideration to ...
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关键词
Iron,MOSFET,Capacitance,Performance evaluation,Semiconductor device modeling,Logic gates
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