Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10 10 High On/Off Current Ratio and Low Specific On-Resistance

In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is ${1.6}\times {10}^{{8}}$ cm ⁻² with a GaN drift layer thickness of $4.5~\mu \text{m}$ . The fabricated prototype GaN SBD delivers a high on/off current ratio of $10^{{10}}$ , a high forward current density of 1.6 kA/cm ² @3 V, a low specific on-resistance of 1.1 $\text{m}\Omega \cdot \text {cm}^{{2}}$ , and a low ideality factor of 1.23.