A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors
IEEE Electron Device Letters(2020)
摘要
A new doping technique to form the conductive source/drain regions of self-aligned coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of the IGZO film was reduced to
$3.8{\times } {10}^{-{4}} \Omega \cdot $
cm after simply coating the organic inter-layer dielectric thin film. The carrier mobility at the saturation region and subthreshold swing of the fabricated IGZO TFTs were 18.4 cm
2
/Vs and of 150 mV/dec, respectively. The channel width-normalized contact resistance was estimated to be as low as
$12~\Omega \cdot $
cm, verifying the ohmic behaviors. Robust device stabilities were also confirmed under bias-stress and temperature-stress conditions.
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关键词
Self-aligned coplanar structure,In-Ga- Zn-O thin-film transistor,organic inter-layer dielectric
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