Addressing Aging Issues In Heterogeneous Three-Dimensional Integrated Circuits

Heterogeneous three-dimensional (3D) integrated technique is a promising method to achieve break-through bandwidth between DRAM and CPU in a computer system. However, in such stacked structure, the elevated temperature poses big challenges to the circuit reliability. In this paper, we provide our solutions to three instability effects in the 3D stack: bias temperature instability, time dependent dielectric breakdown and electromigration.