Crossbar Memory Architecture Performing Memristor Overwrite Logic

2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS)(2019)

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摘要
The non-volatile resistive state of memristor and the ease of controlling this state have triggered its usage in the design of non-volatile memories as well as logic design applications. The memristor based material implication (IMPLY) and memristor aided logic (MAGIC) have been recently presented as new methods to achieve logic computations inside memristive memory architectures. However, these methods are still surrounded by several design constraints. In this context, we present new design for memristive memories with an added computational capabilities. These capabilities are exclusively based on our proposed logic design style, namely Memristor Overwrite Logic (MOL) which is fully digital and tolerant against memristor technology variations.
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关键词
Memristor, Memristor Overwrite Logic (MOL), Crossbar array, Logic design
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