Robust Hot Electron and Multiple Topological Insulator States in PtBi2.

ACS nano(2020)

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摘要
A two-dimensional topological insulator features (only) one bulk gap with nontrivial topology, which protects one dimensional boundary states at Fermi level. We find a quantum phase of matter beyond this category: a multiple topological insulator. It possesses a ladder of topological gaps; each gap protects a robust edge state. We prove a monolayer of van der Walls material PtBi2 as a two-dimensional multiple topological insulator. By means of scanning tunneling spectroscopy, we directly visualize the one-dimensional hot electron (and hole) channels with nanometer size on the samples. Furthermore, we confirm the topological protection of these channels by directly demonstrating their robustness to variations of crystal orientation, edge geometry and sample temperature. The discovered topological hot electron materials may be applied as efficient photocatalysts in the future.
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关键词
topological insulator,2D materials,scanning tunneling microscopy,edge state,hot electron
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