Scintillation Properties of $\beta$ -Ga 2 O 3 Single Crystal Excited by $\alpha$ -Ray
IEEE Transactions on Nuclear Science(2020)
摘要
High-quantity and large-size
$\beta $
-Ga
2
O
3
single crystals were grown by the optimal edge-defined film-fed method. Under the excitation of
241
Am
$\alpha $
-ray, the scintillation light yields of the as-grown and after-annealed
$\beta $
-Ga
2
O
3
single crystal are estimated to be 4797 and 6788 ph/5.5 MeV-
$\alpha $
, respectively. The energy resolutions of the as-grown and after-annealed
$\beta $
-Ga
2
O
3
single crystal are 21.8% and 19.1%, respectively. Annealing in the air can eliminate some color centers and decrease the concentration of free electrons, which can lead to the near-infrared absorption. The light yield and the energy resolution are some slightly worse than that of the commercial Bi
4
Ge
3
O
12
(BGO) scintillator. However, the fast component with the time constant of 7 ns for the as-grown and after-annealed
$\beta $
-Ga
2
O
3
single crystal reaches 25% of the total yield, suggesting that the
$\beta $
-Ga
2
O
3
single crystal grown by the present method is a promising fast scintillator, which could be used in the ultrafast timing resolution detection systems.
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关键词
β-Ga₂O₃,fast decay,scintillator
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