Half-Select-Free Low-Power Dynamic Loop-Cutting Write Assist SRAM Cell for Space Applications
IEEE Transactions on Electron Devices(2020)
摘要
Smaller, lighter, and cost-effective satellite design is a major field of research today. Since such satellites are equipped with limited resources, there is a huge demand for low-power cache memory capable of performing reliably even when subjected to harsh cosmic radiations. To address the same, we have proposed a reliable, power-efficient, half-select-free dynamic loop-cutting write assist 12T (DWA12T) cell. The DWA12T has been compared with other state-of-the-art designs, such as the fully differential 8T (FD8T), single-ended disturb free 9T (SEDF9T), bit-interleaving architecture-implementing 11T (BI11T), differential 12T (D12T), and self-refreshing logic-based 12T (WWL12T) cells to estimate their relative performance in terms of major design metrics under severe process, voltage, and temperature (PVT) variations. The proposed cell exhibits
$1.65\times /3.03\times /1.08\times /1.38\times $
shorter write delay (
${T} _{\text{WA}}$
) and
$3.81\times /1.20\times /1.90\times /2.13\times $
higher write ability [write margin (WM)] than that of SEDF9T/BI11T/D12T/WWL12T and
$1.36\times /1.54\times /1.22\times $
shorter read delay (
${T} _{\text{RA}}$
) and
$6.63\times $
higher read stability [read static noise margin (RSNM)] than that of SEDF9T/BI11T/D12T and FD8T, respectively. Moreover, it consumes
$1.05\times /1.21\times /1.10\times /1.81\times $
lower static power (
${H} _{\text{PWR}}$
) than that of FD8T/SEDF9T/D12T/WWL12T while showing
$3.44\times $
higher hold stability [hold static noise margin (HSNM)] when compared to BI11T. In addition, the DWA12T cell consumes
$1.01\times /1.02\times /1.04\times $
smaller area than that of BI11T/D12T/WWL12T. Furthermore, DWA12T shows lower susceptibility to soft error when compared to FD8T. These improvements are achieved at the cost of
$1.37\times /1.13\times $
penalty in
${T} _{\text{WA}}/{T} _{\text{RA}}$
and
$6.23\times $
penalty in
${H} _{\text{PWR}}$
when compared to FD8T and BI11T, respectively, at
${V} _{\text{DD}} = \text{0.7}$
V.
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关键词
N-curve,leakage power,read delay,read stability,soft error,write ability,write delay
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