Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
IEEE Transactions on Electron Devices(2020)
摘要
This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy description, as in the original manuscript, leads to an incorrect simulation result. Therefore, a fully comprehensive analytical description and a corre...
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关键词
III–V semiconductor,ferroelectric (FE),steep slope,tunnel-FET (TFET)
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