Improvement of luminescence properties of n-GaN using TEGa precursor

T. Hubáček,A. Hospodková,K. Kuldová,M. Slavická Zíková,J. Pangrác, J. Čížek, M.O. Liedke, M. Butterilng,A. Wagner,P. Hubík,E. Hulicius

Journal of Crystal Growth（2020）

引用 7|浏览62

暂无评分

摘要

•Growth from TEGa precursor improved luminescence and structural properties of n-GaN.•Type of carrier gas significantly influences properties of n-GaN.•Nitrogen carrier gas supports creation of big complexes of VGa and VN.

查看译文

关键词

A3. MOVPE,A1. TEGa precursor,B1. n-GaN,A1. yellow band,A1. VGa defect

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要