10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

C. Potier,J.C. Jacquet,Cedric Lacam,N. Michel,Christian Dua, M. Oualli,Sylvain Delage,Stéphane Piotrowicz,Christophe Chang, O. Patard, L. Trinh-Xuan, J. Gruenenpuett,Piero Gamarra, P. Altuntas,Eric Chartier

2019 14th European Microwave Integrated Circuits Conference (EuMIC)（2019）

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摘要

This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a saturated output power of 40dBm. Each stage uses 8x50μm gate width HEMTs fabricated with a 0.I5μm gate length on 70μm thick SiC substrate.

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关键词

MMICs,HEMTs,Gallium nitride,Ka-band,InAlGaN,GaN.

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