A 0.5 THz Signal Source with-11 dBm Peak Output Power Based on InP DHBT

European Microwave Conference(2019)

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摘要
This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 mu m InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only 15 mW from a 1.6 volts power supply, which corresponds to 0.5 % peak DC-to-RF efficiency. The oscillator exhibits the highest efficiency of a millimeter-wave frequency source beyond 400 GHz reported to date. The core area of the circuit is only 0.6 x 0.6 mm(2).
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关键词
InP double heterojunction bipolar transistor (DHBT),monolithic microwave integrated circuit (MMIC) oscillators,reflection oscillator,terahertz (THz),transferred substrate (TS)
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