O-Band Quantum Dot Semiconductor Optical Amplifier Directly Grown On Cmos Compatible Si Substrate

2019 IEEE PHOTONICS CONFERENCE (IPC)(2019)

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摘要
We report the first demonstration of the O-band quantum dot semiconductor optical amplifier (QD-SOA) that is directly grown on CMOS compatible on-axis silicon substrate. The QD-SOA has a length of 3600 mu m, tapered from 4 mu m to 5.5 mu m, which can offer 29 dB on-chip gain and 22.8 dBm saturation output power with a minimum 7 dB fiber to fiber noise figure.
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关键词
Quantum dot devices, semiconductor optical amplifiers, direct growth on silicon, molecular beam epitaxy
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