All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

Hao Xue,Seongmo Hwang,Towhidur Razzak,Choonghee Lee, Gabriel Calderon Ortiz,Zhanbo Xia,Shahadat Hasan Sohel,Jinwoo Hwang,Siddharth Rajan,Asif Khan,Wu Lu

Solid-State Electronics（2020）

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摘要

•New approach to make ohmic contacts to high Al-content AlGaN channel HFETs.•First demonstration of All-MOCVD grown AlGaN channel HFETs with a graded contact layer.•Demonstration of lowest contact resistance on AlGaN channel HFETs with Al composition above 50%.

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关键词

Aluminum gallium nitride,Ultra-wide band gap,Ohmic contacts,RF transistor

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