An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies

SCIENTIFIC REPORTS(2019)

引用 16|浏览51
暂无评分
摘要
The emergence of memristor technologies brings new prospects for modern electronics via enabling novel in-memory computing solutions and energy-efficient and scalable reconfigurable hardware implementations. Several competing memristor technologies have been presented with each bearing distinct performance metrics across multi-bit memory capacity, low-power operation, endurance, retention and stability. Application needs however are constantly driving the push towards higher performance, which necessitates the introduction of a standard benchmarking procedure for fair evaluation across distinct key metrics. Here we present an electrical characterisation methodology that amalgamates several testing protocols in an appropriate sequence adapted for memristors benchmarking needs, in a technology-agnostic manner. Our approach is designed to extract information on all aspects of device behaviour, ranging from deciphering underlying physical mechanisms to assessing different aspects of electrical performance and even generating data-driven device-specific models. Importantly, it relies solely on standard electrical characterisation instrumentation that is accessible in most electronics laboratories and can thus serve as an independent tool for understanding and designing new memristive device technologies.
更多
查看译文
关键词
Characterization and analytical techniques,Electrical and electronic engineering,Science,Humanities and Social Sciences,multidisciplinary
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要