Impact of Process Variability and Single Event Transient on FinFET Technology
2019 IFIP/IEEE 27th International Conference on Very Large Scale Integration (VLSI-SoC)(2019)
摘要
The evolution of integrated circuits has made them more susceptible to the radiation effects, besides increasing the manufacturing process variability. Traditionally, complex gates are adopted to reduce area, delay and power consumption. However, they can introduce challenges related to a robustness that might be avoided with more regular and basic cells. This extended abstract presents my current research works. Firstly, the different works performed in my research are described. Then, a short version methodology and the main results are presented.
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关键词
FinFET technology,multi-level design,process variability,single event transient
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