Characterization and Failure Analysis of 650 V Enhancement-mode GaN HEMT for Cryogenically-Cooled Power Electronics
IEEE Journal of Emerging and Selected Topics in Power Electronics(2020)
摘要
In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN high-electron mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied i...
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关键词
Cryogenics,HEMTs,Gallium nitride,Logic gates,Testing,Temperature
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