Effect of oxygen vacancies on photoluminescence and electrical properties of (2 0 0) oriented fluorine-doped SnO2 films

Xuan Wang,Qingyin Di,Xiaolong Wang,Hongli Zhao,Bo Liang,Jingkai Yang

Materials Science and Engineering: B（2019）

引用 19|浏览10

暂无评分

摘要

•The oxygen vacancies in (2 0 0) oriented FTO films has been investigated.•FTO film with F = 3.91at.% in film possesses the smallest resistivity of 3.50 × 10−4 Ω·cm.•An intense UV emission peak at ~391 nm is related to the inter level formed by F−.

查看译文

关键词

Fluorine-doped tin oxide films,Oxygen vacancies,Resistivity,Photoluminescence properties

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要