Electron-Doped Sige Quantum Well Terahertz Emitters Pumped By Fel Pulses

2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)(2019)

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摘要
We explore saturable absorption and terahertz photoluminescence emission in a set of n-doped Ge/SiGe asymmetric coupled quantum wells, designed as three-level systems (i.e. quantum fountain emitter). We generate a non-equilibrium population by optical pumping at the 1 -> 3 transition energy using picosecond pulses from a free-electron laser and characterize this effect by measuring absorption as a function of the pump intensity. In the emission experiment we observe weak emission peaks in the 14-25 meV range (3-6 THz) corresponding to the two intermediate intersubband transition energies. The results represent a step towards silicon-based integrated terahertz emitters.
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silicon-based integrated terahertz emitters,electron-doped SiGe quantum well terahertz emitters,FEL pulses,saturable absorption,terahertz photoluminescence emission,asymmetric coupled quantum wells,three-level systems,quantum fountain emitter,nonequilibrium population,optical pumping,1→3 transition energy,picosecond pulses,free-electron laser,pump intensity,emission experiment,weak emission peaks,intermediate intersubband transition energies,electron volt energy 14.0 meV to 25.0 meV,frequency 3.0 THz to 6.0 THz,Ge-SiGe
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