Highly Selective Atomic Layer Deposition of MoSiOx Using Inherently Substrate-Dependent Processes

•A selective MoSiOx deposition on Si versus SiO2 and SiN was demonstrated.•The selectivity relies on the different reactivity between the substrates.•The selectivity calculated using XPS sensitivity was about 200:1 between Si and SiO2.•Selective MoSiOx deposition was verified on nanoscale 3D structures.•A conversion of MoSix into MoSiOx provides a new approach to selective deposition.