Evaluation and Analysis of Temperature-Dependent Dynamic $R_{{{\mathrm{DS}}},{{\mathrm{ON}}}}$ of GaN Power Devices Considering High-Frequency Operation

Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic RDS,ON problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic RDS,ON at high frequency is evaluated experimentally for the first time usin...