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Influence of Poly-AlN Passivation on the Performance Improvement of 3-Mev Proton-Irradiated AlGaN/GaN MIS-HEMTs

IEEE Transactions on Nuclear Science(2019)

Cited 6|Views25
Key words
Passivation,Radiation effects,Protons,HEMTs,MODFETs,Gallium nitride,Aluminum nitride,AlGaN,GaN HEMTs,dynamic ON-resistance,poly-AlN passivation,proton irradiation
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