Design Considerations for Insulator Metal Transition based Artificial Neurons
Midwest Symposium on Circuits and Systems Conference Proceedings(2019)
摘要
This work presents an Insulator Metal Transition (IMT) based Integrate-And-Fire (IAF) neuron. The proposed neuron leverages the switching mechanism of the IMT device to deliver the neuron functionality without the need for complex CMOS circuitry. The IMT neuron parameters such as the threshold voltage and the refractory period, however, are dependent on the device parameters. Design expressions for the IMT neuron are derived. These expressions can aid designers choosing the proper circuit variables given a specific IMT device with a particular set of device parameters.
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关键词
design expressions,specific IMT device,design considerations,switching mechanism,neuron functionality,complex CMOS circuitry,IMT neuron parameters,insulator metal transition based artificial neurons,insulator metal transition based integrate-and-fire neuron,threshold voltage,refractory period,device parameters,circuit variables
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