Facts and Myths of Dielectric Breakdown Processes—Part II: Post-Breakdown and Variability

IEEE Transactions on Electron Devices(2019)

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摘要
Device dimension scaling and process complexity have revealed new phenomena such as post-breakdown (BD) and variability issues in advanced technology nodes. Coupling of the first BD phenomena and their methodologies discussed in part I with the development of post-BD methodologies allows engineers to use device stress-data to accurately predict the product failure lifetime. The statistical modeling and new advances in understanding the root cause of variability issues have mitigated these seemingly uncontrollable “catastrophes” so that the scaling of the advanced technology process can continue its successful path forward. These two important aspects of dielectric BD will be reviewed in part II.
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关键词
Dielectrics,Electric breakdown,Reliability,Integrated circuit modeling,Transient analysis,Current measurement,Voltage measurement
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