Design and Experimental Validation of a Wire-bond-less 10 kV SiC MOSFET Power Module
IEEE Journal of Emerging and Selected Topics in Power Electronics(2020)
摘要
Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium- and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limiting the performance of these unique switches. The objective of this article is to push the boundaries of high-density, high-speed, 10-kV power modul...
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关键词
Silicon carbide,Multichip modules,MOSFET,Silicon,Electric fields,Switches,Ceramics
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