Design and Experimental Validation of a Wire-bond-less 10 kV SiC MOSFET Power Module

IEEE Journal of Emerging and Selected Topics in Power Electronics(2020)

引用 40|浏览22
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摘要
Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium- and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limiting the performance of these unique switches. The objective of this article is to push the boundaries of high-density, high-speed, 10-kV power modul...
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关键词
Silicon carbide,Multichip modules,MOSFET,Silicon,Electric fields,Switches,Ceramics
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