Thermal and Temporal Properties of a Thin Layer of Bromo Indium Phthalocyanine Nanostructures

In this work, we report on the synthesis, fabrication, and electrical and optical characterization of sandwich devices of bromo indium phthalocyanine thin film nanostructures in aluminum electrodes using electron beam evaporation in a high vacuum which have the potential to be used for sensing applications. We investigate the influence of both parameters of temperature and frequency on the conduction mechanism to determine the transport process in the carriers. Results demonstrate that the capacitance, dielectric constant and loss factor decrease with increasing the frequency and increase in high temperatures. The behavior of capacitance and loss factor fits well with the model of Goswami and Goswami and the results imply the domination of hopping theory. In addition, analysis of the absorption spectrum indicates that the optical band gap energy is 3 eV. Furthermore, morphological analysis demonstrates that all films have a smooth surface with homogeneous small crystal grains with a nanoscale size order of 40 ± 10 nm. Thus, temperature and frequency-dependent experiments of optical and electrical parameters of the bromo indium phthalocyanine thin film nanostructures show their potential to be employed for sensing applications.