A Physical and Versatile Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating Conditions

•A new physical and accurate aging compact model for HCI in modern SiGe HBTs.•Developed based on Reaction Diffusion theory and Fick’s law of diffusion.•The model ensures time invariance in simulation of the degradation characteristics•Model validation performed on three advanced technologies and diverse stress conditions.•The proposed model is compatible with existing circuit design framework.•Efficient model implementation for predicting reliability-aware circuit architectures.