Broadband InGaP/GaAs HBT Power Amplifier Integrated Circuit Using Cascode Structure and Optimized Shunt Inductor
IEEE Transactions on Microwave Theory and Techniques(2019)
摘要
This article presents a broadband two-stage cascode power amplifier integrated circuit (PAIC) using a 2-μm InGaP/GaAs heterojunction bipolar transistor process. Since higher supply voltage of cascode power amplifier (PA) results in lower impedance transformation ratio of the matching network due to lower current, cascode PAs generally have broader bandwidth than common-emitter (CE) PAs. However, b...
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关键词
Broadband,Power amplifiers,Heterojunction bipolar transistors,Integrated circuits
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