Short/mid-wave two-band type II InAs/GaSb superlattice infrared heterojunction phototransistor

Wenjun Huang,Jianliang Huang,Yanhua Zhang,Chengcheng Zhao,Biying Nie,Yulian Cao,Wenquan Ma

international conference on indium phosphide and related materials（2019）

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摘要

We report on a short/mid-wave (SW/MW) two-band type-II InAs/GaSb superlattice infrared heterojunction phototransistor (HPT). The structure consists of two back-to-back HPTs for the SW and MW detections. At 77 K, the 50% cutoff wavelength of the SW and MW HPT is 2.6 and 4.2 μm, respectively. When the applied bias voltage is 1.2 V, the responsivity is 213 A/W and the current gain is 611 for the SW band, while for the MW band, the responsivity is 45.2 A/W and the current gain is 377 at bias voltage of 1.3 V.

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关键词

current gain,cutoff wavelength,MW HPT,SW HPT,applied bias voltage,MW band,SW band,wavelength 2.6 mum,wavelength 4.2 mum,temperature 77.0 K,voltage 1.2 V,voltage 1.3 V,InAs-GaSb

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