Using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties

In this paper using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties. In-line VHF-PECVD was developed by MIRDC (Metal Industries Research & Development Centre) in Taiwan. In-line VHF-PECVD system with an electrode distance was 15 to 50 mm and electrode area of 1681 cm ² . Due to the difference between the observation port and the plasma position. Therefore, this paper developed an online VHF-PECVD internal optical system to verify the stability of the internal optical system. The OES is a non-intrusive monitoring device that is widely used for real-time monitoring and stabilization devices for plasma monitoring. This paper used OES to monitor the stability of processed silicon thin films.