Development Of Hall Effect Sensor On Algan/Gan Finfet Structure

In order to improve the sensitivity of the embedded Hall-effect sensor in AlGaN/GaN integrated circuit and achieve a high-temperature high-sensitivity sensor performance, the analyses for optimized Fin structure for the GaN Hall-effect device are presented in this paper. In the process, the influences of the relaxation degree and the current density on the Hall voltage are both considered to obtain the best design. Both the calculated and the 3-D simulation results are obtained. It is shown that the sensitivity is strongly dependent on the width of the fin dimension.