Improved Electrical Degradation Of Alingan/Gan Hemt By Using Triethylgallium Grown Gan Channel And Cap

A comparison of electrical degradation of AlInN and AlInGaN HEMT with their GaN channel grown by trimethylgallium (TMG)/ triethylgallium (TEG) has been studied in details. A notable reduction in dynamic Ron and current collapse is observed by growing the GaN channel with TEG precursor. AlInN HEMT with TEG grown GaN channel exhibits lower dynamic Ron, current collapse and transconductance dispersion as opposed to TMG grown GaN channel. We attribute this improved device performance due to more than one order of magnitude reduction in residual carbon in the TEG grown GaN channel. Pulsed transconductance and I _d -V _g measurements indicate acceptor like trap states under the gate and gate-drain access region. Further improvement in device degradation is also observed by replacing the AlInN barrier with the AlInGaN barrier, having the same TEG grown GaN channel. Therefore, the AlInGaN barrier seems to be more immune to charge trapping than that of AlInN barrier.