InAs/GaSb Core-Shell Nanowires: Growth and Characterization

We present results about the growth, structural properties and electrical transport of InAs/GaSb core-shell nanowires. The nanowire are grown self-seeded and selectively by molecular beam epitaxy on patterned SiO ₂ /Si(111) substrates. The two combined materials are almost lattice matched resulting in coherent epitaxial growth, which is demonstrated by high resolution transmission electron microscopy measurements. Multi-terminal devices contacting both the core and shell are processed using selective wet chemical etching and electron beam lithography. The broken-gap heterointerface of InAs and GaSb are reflected in the DC electrical measurements which are discussed with the help of simulation results of the band structure and carrier concentrations.