Growth Of Gaas/Ganas/Gaas Core-Multishell Nanowires Lasing At 1 Mu M

We demonstrate the molecular beam epitaxial growth of high quality GaAs/GaNAs/GaAs core-multishell nanowire containing 2% nitrogen in the GaNAs shell layer. The transmission microscopy investigation shows clear formation of the core-multishell structure without detectable deformations. We observe lasing peak near $1 \mu \mathrm{m}$ sustaining its lasing behavior up to over 100 K. These results demonstrate that the utilized structure represents a promising alternative for achieving room-temperature near-infrared nanowire lasers.