Selective Etching of Native Silicon Oxide in Preference to Silicon Oxide and Silicon
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)(2019)
摘要
An in-situ dry clean which removes native SiO
x
and flowable oxide but does not etch the underlying silicon, thermal SiO
2
or SiN
x
, is reported. This process utilized a remote NF
3
/NH
3
/Ar plasma, and the selectivity was studied as a function of temperature and time. Under the optimized conditions, the native SiO
x
on Si was removed after~15 seconds of plasma exposure whereas the etching of as-sputtered SiO
2
was zero within this time period. Selectivity on a nanometer scale was confirmed by TEM of a patterned Si wafer showing that the optimized dry clean removed flowable SiO
2
but does not etch Si and leaves SiNx/thermal SiO
2
fins undamaged. Furthermore, this cleaning procedure was used to remove the native oxide on a SiGe-based patterned sample containing SiO
2
/SiN
x
films in preparation for MoSi
x
atomic layer deposition (ALD). The selectivity between two types of silica relied on defective or weak Si-O bonds in native SiO
x
compared to SiO
2
.
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关键词
dry clean removed flowable SiO2,TEM,atomic layer deposition,SiO2/SiNx films,defective Si-O bonds,cleaning procedure,patterned Si wafer,plasma exposure,flowable oxide,native silicon oxide,selective etching,MoSix,SiOx,SiO2-SiNx
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