Low temperature junctionless device stacking enabled by leading edge sequential 3D integration

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)(2019)

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摘要
Sequential or monolithic 3D integration requires a combination of advanced manufacturing processes and highly reliable integration scheme at both device and substrate level. In order to achieve this, front-end layer transfer technology looks as key element of 3D integration flow. In this paper, we will bring an insight on technology challenges as well as solutions to enable sequential 3D device integration. We will also exhibit successful demonstration of low temperature device stacking using junctionless top devices.
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关键词
edge sequential 3D integration,monolithic 3D integration,advanced manufacturing processes,highly reliable integration scheme,substrate level,front-end layer transfer technology,3D integration flow,junctionless top devices,low temperature junctionless device stacking
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