A Combined Process Of Silicon Shadow Masking And Inkjet Printing (Ssmp) For Making Graphene Oxide And Reduced Graphene Oxide Microstructures For Selective Cell Culturing Applications

This paper demonstrates a combined process of silicon shadow masking and inkjet printing (SSMP) to fabricate graphene oxide (GO) and reduced graphene oxide (rGO) line features with a width ranging from 20 to 70 mu m on varieties of substrates, such as PDMS, SiO2 , Kapton, etc. for selectively cell (RPE and PC-12 cells) culturing applications. The rGO with an electrical resistance of 33.48k Omega/ is characterized via a printed four point resistivity measurement structure. Owing to the characteristics of low chemical usage, low process temperature and complexity, and high fault tolerance of inkjet printers, the process technique has shown its potential for biomedical applications in terms of flexible cell culturing platform fabrication.