Oxygen Content and Bias Influence on Amorphous InGaZnO TFT-Based Temperature Sensor Performance

A temperature (T) sensor based on an amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is demonstrated and its performance is analyzed quantitatively. The performance analysis includes the influences of the gateto-source bias (VGS) and oxygen content in IGZO on the mobility (μ), threshold voltage (VT), and drain-to-source current (IDS) of TFTs. The linearity and sensitivity of the sensor are f...