Study of Plasma Arcing Mechanism in High Aspect Ratio Slit Trench Etching
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2019）
Key words
electrical field breakdown,arcing risk,high ESC temperature,acceptable vertical trench profile,HAR etching,plasma arcing mechanism,high aspect ratio slit trench etching,recipe development,high aspect ratio trench etching,pattern boundary,deep trench etching,polymer thickness measurement,hard-mask,critical thickness,bare-silicon wafer,low pressure inert gas dilution,vertical trench profile,pattern damage,Si
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