Balanced Performance Enhancements of a‐InGaZnO Thin Film Transistors by Using All‐Amorphous Dielectric Multilayers Sandwiching High‐k CaCu3Ti4O12

The requirements of low power consumption and fast operation have necessitated the development of thin film transistors (TFTs) with exploration of new dielectric materials. Here, the unprecedented integration of high-kappa dielectric CaCu3Ti4O12 is reported, yielding significant enhancements in the performance of amorphous InGaZnO TFTs. Using a multilayer structured amorphous Al2O3/CaCu3Ti4O12/Al2O3 dielectric configuration, the performance of the transistors is greatly improved as highlighted with high saturation mobility (>10 cm(2) Vs(-1)), high on/off current ratio (3.8 x 10(7)), low threshold voltage (approximate to 0.51 V), and low subthreshold swing (approximate to 0.45 V decade(-1)). The balanced performance enhancements are attributed to the lower density of interfacial/bulk trap states and sufficient band offsets.