AlGaN multiple quantum wells by PA-MBE for deep UV emission: Effect of growth interruptions

Sayantani Sen,Chirantan Singha,Anirban Saha,Alakananda Das,Pushan Guha Roy,Pallabi Pramanik,A. Bhattacharyya

Journal of Crystal Growth（2019）

引用 3|浏览11

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摘要

•40 Al0.75Ga0.25N/AlN MQWs grown by PA-MBE with additional plasma exposure step.•Group III/V>>1 leads to high radiative recombination rate but diffuse interfaces.•N-plasma exposure step improves interface quality and PL intensity.•Radiative recombination rate depends on in-plane carrier localization.•Faceted well-barrier interfaces lead to optimized optical properties.

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关键词

A1. Interfaces,A1. X-ray diffraction,A3. Migration enhanced epitaxy,A3. Molecular beam epitaxy,B1. Nitrides,B2. Semiconducting III-V materials

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