Design, Analysis, and Discussion of Shortcircuitand Overload Gate-Driver Dual-Protection Schemefor 1.2 kV, 400 A SiC MOSFET Modules

This paper proposes short circuit and overload gate-driver dual-protection scheme based on the parasitic inductance between the Kelvin- and power-source terminals of high-current SiC mosfet modules. The paper presents a comprehensive analysis of the two schemes in question, including worst-case analysis used to assess their parametric dependence due to manufacturing tolerances and temperature variations, as well as the in-depth design procedure that can be generally applied to any power module containing a Kelvin-source. For verification, a compact 1.2-kV, 400-A half-bridge module integrating the two protection circuits was developed. The results obtained demonstrate a response time within tens of nanoseconds, and effectively validate their functionality under short circuit and overload scenarios. Finally, a 100-kW, 400-V dc three-phase voltage-source inverter was used to demonstrate the gate-driver with integrated protection functions under 105°C ambient temperature conditions.