Interaction-Induced Edge States In Hgte/Cdte Quantum Wells Under A Magnetic Field

In this paper, we study doped HgTe/CdTe quantum wells with Hubbard-type interaction under a perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is strongly enhanced by interaction around the region when the band inversion of the topological insulator is destroyed by a magnetic field. The enhanced BIA term creates edge-like electronic states which can explain the experimentally discovered edge conductance in doped HgTe/CdTe quantum wells in a similar magnetic field regime.